Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home Products3 Pin Transistor

2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

China 2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor supplier

Large Image :  2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: 2SK2996

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7900pcs
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Detailed Product Description
Gate Leakage Current: ±10 μA Gate−source Breakdown Voltage: ±30 V
Drain Cut−off Current: 100 μA Drain−source Breakdown Voltage: 600 V
Gate Threshold Voltage: 2.0 To 4.0 V Drain−source ON Resistance: 0.74 Ω
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LD1117ADT18TR 51000 ST 15+ TO-252
LD1117S18TR 101000 ST 11+ SOT-223

 

 

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(π−MOSV) 2SK2996

 

DC−DC Converter, Relay Drive and Motor Drive Applications

 

Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.)

High forward transfer admittance : |Yfs| = 6.8 S (typ.)

Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)

Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Drain−source voltage VDSS 600 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate−source voltage VGSS ±30 V
Drain current DC (Note 1) ID 10 A
Pulse (Note 1) IDP 30
Drain power dissipation (Tc = 25°C) PD 45 W
Single pulse avalanche energy (Note 2) EAS 252 mJ
Avalanche current IAR 10 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

 

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

   Weight: 1.9 g (typ.)

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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